IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of the electrorefractive effect in Ge/SiGe coupled quantum well for silicon based optical modulators

2010 15th OptoeElectronics and Communications Conference (OECC)

Author(s): Iseri, Y. ; Yamada, H. ; Arakawa, T. ; Tada, K. ; Haneji, N.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2010
Conference Location: Sapporo, Japan, Japan
Conference Date: 5 July 2010
Page(s): 678 - 679
ISBN (CD): 978-4-88552-246-8
ISBN (Electronic): 978-4-88552-246-8
ISBN (Paper): 978-1-4244-6785-3
Regular:

A Ge/SiGe coupled quantum well for optical modulators based on phase modulation was proposed and its electrorefractive characteristics are theoretically analyzed using the k•p perturbation... View More

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