IEEE - Institute of Electrical and Electronics Engineers, Inc. - Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics

Author(s): C.E. Zah ; R. Bhat ; S.G. Menocal ; F. Favire ; N.C. Andreadakis ; M.A. Koza ; C. Caneau ; S.A. Schwarz ; Y. Lo ; T.P. Lee
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1990
Volume: 2
Page(s): 231 - 233
ISSN (Electronic): 1941-0174
ISSN (Paper): 1041-1135
DOI: 10.1109/68.53245
Regular:

High-power, 1.5- mu m, ridge-waveguide lasers with GaInAs/GaInAsP multiple-quantum-well active layers are discussed. For 1-mm-long devices, a threshold current of 35 mA and an output power... View More

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