IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication of PN junction capacitor using SiP technology on Si-based interposer wafer

2010 11th International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP)

Author(s): Dai Fengwei ; Wang Huijuan ; Wang Qidong ; Zhou Jing ; Gao Wei ; Guo Xueping ; Cao Liqiang ; Wan Lixi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 2010
Conference Location: Xi'an, China, China
Conference Date: 16 August 2010
Page(s): 12 - 15
ISBN (CD): 978-1-4244-8141-5
ISBN (Electronic): 978-1-4244-8142-2
ISBN (Paper): 978-1-4244-8140-8
DOI: 10.1109/ICEPT.2010.5582385
Regular:

The article relates to the fabrication of embedded P-N junction capacitors, using System-in-Package (SiP) technology, on a silicon interposer wafer with Through-Silicon-Via (TSV). The P-N junction... View More

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