IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reduction of bulk and surface recombination in GaAs for improved solar cell performance

Author(s): D. Wong ; T.E. Schlesinger ; A.G. Milnes
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 1990
Volume: 11
Page Count: 3
Page(s): 321 - 323
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.56488
Regular:

A technique for suppressing recombination centers and increasing minority-carrier diffusion lengths in bulk n-type GaAs is described. It is shown that such pretreatment of the material leads to... View More

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