IEEE - Institute of Electrical and Electronics Engineers, Inc. - Single-dopant memory effect in P-doped Si SOI-MOSFETs

2010 Silicon Nanoelectronics Workshop (SNW)

Author(s): Hamid, E. ; Tarido, J.C. ; Miki, S. ; Mizuno, T. ; Moraru, D. ; Tabe, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2010
Conference Location: Honolulu, HI, USA, USA
Conference Date: 13 June 2010
Page(s): 1 - 2
ISBN (Electronic): 978-1-4244-7726-5
ISBN (Paper): 978-1-4244-7727-2
DOI: 10.1109/SNW.2010.5562582
Regular:

We investigated single electron charging in few-dopant systems by experiment and simulation. Our simulation results are in good agreement with experimental results. This provides a strong support... View More

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