IEEE - Institute of Electrical and Electronics Engineers, Inc. - Recent progress in high-power GaInAsP lasers

Author(s): S. Oshiba ; Y. Tamura
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 1990
Volume: 8
Page Count: 7
Page(s): 1,350 - 1,356
ISSN (Paper): 0733-8724
ISSN (Online): 1558-2213
DOI: 10.1109/50.59164
Regular:

The high-power characteristics (180 mW, CW) and reliability of 1.48- mu m Fabry-Perot laser diodes are studied for V-grooved inner stripe lasers grown by liquid phase epitaxy on p-type substrate... View More

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