IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 780 nm high-power and highly reliable laser diode with a long cavity and a thin tapered-thickness active layer

Author(s): A. Shima ; H. Matsubara ; W. Susaki
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 1990
Volume: 26
Page Count: 9
Page(s): 1,864 - 1,872
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/3.62105
Regular:

Conventional AlGaAs laser diodes with uniform thickness active layers of various cavity lengths are investigated. It is recognized that the extension of the cavity length is effective in the... View More

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