IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design of X-band low-noise amplifier for optimum matching between noise and power

2010 2nd International Conference on Education Technology and Computer (ICETC)

Author(s): Wang Xiao-mei ; Sun Zhengwen ; Chen Yong ; Wang Sixiu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2010
Conference Location: Shanghai, China, China
Conference Date: 22 June 2010
Volume: 5
ISBN (CD): 978-1-4244-6369-5
ISBN (Electronic): 978-1-4244-6370-1
ISBN (Paper): 978-1-4244-6367-1
DOI: 10.1109/ICETC.2010.5529786
Regular:

High Electron Mobility Transistors (HEMT) plays a crucial role in microwave low noise receivers. Low noise HEMTs are used extensively in the ultra low noise amplifier (LNAs). Design the LNA is... View More

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