IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of a n-type Field Effect Transistor made from direct growth and patterning of single wall carbon nanotubes film

2010 International Symposium on Computer, Communication, Control and Automation (3CA)

Author(s): Chen-Da Tsai ; Chih Sheng Yang ; Shiau, S.H. ; Liu, C.W. ; Gau, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2010
Conference Location: Tainan, Taiwan, Taiwan
Conference Date: 5 May 2010
Volume: 2
Page(s): 589 - 593
ISBN (CD): 978-1-4244-5567-6
ISBN (Electronic): 978-1-4244-5568-3
ISBN (Paper): 978-1-4244-5565-2
DOI: 10.1109/3CA.2010.5533748
Regular:

Characterization of a n-type Field Effect Transistor (FET) made from direct growth and patterning of a dense single wall carbon nanotubes (SWNTs) network on a silicon substrate, using alcohol as... View More

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