IEEE - Institute of Electrical and Electronics Engineers, Inc. - A modified berman model for the prediction of time-dependent dielectric breakdown (TDDB) characteristics of low-k/ULK interconnect dielectrics from dual-voltage ramp dielectric breakdown (DVRDB) test

2010 IEEE International Interconnect Technology Conference - IITC

Author(s): Tae-Young Jeong ; Seunghee Oh ; Miji Lee ; Seungman Choi ; Kim, A.T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2010
Conference Location: Burlingame, CA, USA, USA
Conference Date: 6 June 2010
Page(s): 1 - 3
ISBN (CD): 978-1-4244-7677-0
ISBN (Electronic): 978-1-4244-7678-7
ISBN (Paper): 978-1-4244-7676-3
DOI: 10.1109/IITC.2010.5510706
Regular:

We present a modified Berman model that relates breakdown voltage distributions, from dual voltage ramp dielectric breakdown (DVRDB) test, to the distribution of time-to-fail (TTF) during constant... View More

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