IEEE - Institute of Electrical and Electronics Engineers, Inc. - 300 GHz six-stage differential-mode amplifier

2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

Author(s): Park, H. J. ; Rieh, J. S. ; Kim, M. ; Hacker, J. B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2010
Conference Location: Anaheim, CA, USA, USA
Conference Date: 23 May 2010
Page(s): 1
ISBN (CD): 978-1-4244-7732-6
ISBN (Electronic): 978-1-4244-6058-8
ISBN (Paper): 978-1-4244-6056-4
ISBN (Online): 978-1-4244-6057-1
ISSN (CD): 0149-645X
ISSN (Paper): 0149-645X
ISSN (Online): 0149-645X
DOI: 10.1109/MWSYM.2010.5515328
Regular:

A 300 GHz amplifier is fabricated using indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The cascade chain in the amplifier contains six unit cells each... View More

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