IEEE - Institute of Electrical and Electronics Engineers, Inc. - Establishing the minimum reverse bias for a p-i-n diode in a high-power switch

Author(s): R.H. Caverly ; G. Hiller
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1990
Volume: 38
Page Count: 6
Page(s): 1,938 - 1,943
ISSN (Paper): 0018-9480
ISSN (Online): 1557-9670
DOI: 10.1109/22.64577
Regular:

An important circuit design parameter in a high-power p-i-n diode application is the selection of an appropriate applied DC reverse bias voltage. Until now, this important circuit parameter has... View More

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