IEEE - Institute of Electrical and Electronics Engineers, Inc. - New scaling limitation of the floating gate cell in NAND Flash Memory

2010 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Yong Seok Kim ; Dong Jun Lee ; Chi Kyoung Lee ; Hyun Ki Choi ; Seong Soo Kim ; Jai Hyuk Song ; Du Heon Song ; Jeong-Hyuk Choi ; Kang-Deog Suh ; Chilhee Chung
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2010
Conference Location: Garden Grove (Anaheim), CA, USA, USA
Conference Date: 2 May 2010
Page(s): 599 - 603
ISBN (CD): 978-1-4244-5431-0
ISBN (Electronic): 978-1-4244-5429-7
ISBN (Paper): 978-1-4244-5430-3
ISSN (CD): 1541-7026
ISSN (Electronic): 1938-1891
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2010.5488765
Regular:

As the scaling in NAND Flash Memory is progressed, the various interferences among the adjacent cells are more and more increased and the new phenomenon which is ignored until now has to be... View More

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