IEEE - Institute of Electrical and Electronics Engineers, Inc. - Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

2010 IEEE International Reliability Physics Symposium (IRPS)

Author(s): Chou, Y.C. ; Leung, D.L. ; Biedenbender, M. ; Buttari, D. ; Eng, D.C. ; Tsai, R.S. ; Lin, C.H. ; Lee, L.S. ; Mei, X.B. ; Wojtowicz, M. ; Barsky, M.E. ; Lai, R. ; Oki, A.K. ; Block, T.R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2010
Conference Location: Garden Grove (Anaheim), CA, USA, USA
Conference Date: 2 May 2010
Page(s): 807 - 812
ISBN (CD): 978-1-4244-5431-0
ISBN (Electronic): 978-1-4244-5429-7
ISBN (Paper): 978-1-4244-5430-3
ISSN (CD): 1541-7026
ISSN (Electronic): 1938-1891
ISSN (Paper): 1541-7026
DOI: 10.1109/IRPS.2010.5488728
Regular:

Reliability performance of 0.1-µm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature lifetesting. The primary degradation mechanism was observed to be... View More

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