IEEE - Institute of Electrical and Electronics Engineers, Inc. - Minority-carrier transport parameters in n-type silicon

Author(s): C.H. Wang ; K. Misiakos ; A. Neugroschel
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1990
Volume: 37
Page Count: 9
Page(s): 1,314 - 1,322
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.108194
Regular:

Minority-carrier diffusion length L, lifetime tau , and diffusion coefficient D in n-type Si are measured at 296 K in the doping range from 10/sup 18/ cm/sup -3/ to 7*10/sup 19/ cm/sup -3/. The... View More

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