IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multi-reversed-junction LDMOST with very high breakdown voltage per unit length

2010 International Workshop on Junction Technology (IWJT)

Author(s): Jianbing Cheng ; Bo Zhang ; Zhaoji Li ; Yufeng Guo ; Shujuan Yu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2010
Conference Location: Shanghai, China, China
Conference Date: 10 May 2010
Page(s): 1 - 4
ISBN (CD): 978-1-4244-5868-4
ISBN (Electronic): 978-1-4244-5869-1
ISBN (Paper): 978-1-4244-5866-0
DOI: 10.1109/IWJT.2010.5475004
Regular:

A novel non-uniform multi-reversed-junction power MOSFET is presented in this paper. The high and uniform electric field in substrate is achieved due to modulating from space charges in the... View More

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