IEEE - Institute of Electrical and Electronics Engineers, Inc. - Sub-20 nm abrupt USJ formation with long ms-flash with sub-2 nm dopant motion control

2010 International Workshop on Junction Technology (IWJT)

Author(s): Lee, K.L. ; Lauer, I. ; Ronsheim, P. ; Neumayer, D. ; McCoy, S. ; Kulkarni, P. ; Chan, J. ; Skordas, S. ; Zhu, Y. ; Gelpey, J. ; Park, D.-g.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2010
Conference Location: Shanghai, China, China
Conference Date: 10 May 2010
Page(s): 1 - 5
ISBN (CD): 978-1-4244-5868-4
ISBN (Electronic): 978-1-4244-5869-1
ISBN (Paper): 978-1-4244-5866-0
DOI: 10.1109/IWJT.2010.5475001
Regular:

A new combination of long millisecond (1-2.5 ms) flash anneal at high peak temperature(1200-1300°C) and a new absorber with low deposition temperature (<400 C) have been developed to... View More

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