IEEE - Institute of Electrical and Electronics Engineers, Inc. - Amorphous silicon waveguides grown by PECVD on an Indium Tin Oxide buried contact

MELECON 2010 - 2010 15th IEEE Mediterranean Electrotechnical Conference

Author(s): Rao, S. ; Della Corte, F.G. ; Summonte, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 2010
Conference Location: Valletta, Malta, Malta
Conference Date: 26 April 2010
Page(s): 1,465 - 1,469
ISBN (CD): 978-1-4244-5794-6
ISBN (Electronic): 978-1-4244-5795-3
ISBN (Paper): 978-1-4244-5793-9
DOI: 10.1109/MELCON.2010.5476232
Regular:

Low-loss hydrogenated amorphous silicon (α-Si∶H) waveguides were realized by plasma enhanced chemical vapour deposition (PECVD) on a transparent conductive oxide (TCO) layer which is... View More

Advertisement