IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistors

Author(s): P.-F. Lu
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 March 1990
Volume: 37
Page Count: 6
Page(s): 762 - 767
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.47783
Regular:

The collector-base junction avalanche in advanced n-p-n transistors in the temperature range of 293 to 83 K is described. The multiplication factor is shown to increase exponentially with... View More

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