IEEE - Institute of Electrical and Electronics Engineers, Inc. - Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts

Author(s): K. Nakajima ; T. Iida ; K.-I. Sugimoto ; H. Kan ; Y. Mizushima
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1990
Volume: 37
Page Count: 5
Page(s): 31 - 35
ISSN (Paper): 0018-9383
ISSN (Online): 1557-9646
DOI: 10.1109/16.43797
Regular:

A GaAs metal-semiconductor-metal photodetector fabricated in a symmetrical and interdigital Schottky contact structure on a semi-insulating GaAs substrate is discussed. The device exhibits... View More

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