IEEE - Institute of Electrical and Electronics Engineers, Inc. - Crystalline Ge1-xSnx Heterostructures in Lateral High-Speed Devices

2010 Fourth International Conference on Quantum, Nano and Micro Technologies (ICQNM)

Author(s): Jeschke, S. ; Pfeiffer, O. ; Schulze, J. ; Wilke, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 2010
Conference Location: Netherlands Antilles, Netherlands Antilles
Conference Date: 10 February 2010
Page(s): 53 - 58
ISBN (CD): 978-0-7695-3952-2
ISBN (Electronic): 978-1-4244-5808-0
ISBN (Paper): 978-1-4244-5807-3
DOI: 10.1109/ICQNM.2010.17
Regular:

This paper describes an approach to manufacture high-speed Germanium MOSFETS with strained channels made from Ge1-xsSnx-alloys while embedding the needed technology process flow into a virtual... View More

Advertisement