IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 2.14 GHz GaN power amplifier with 1-bit discrete power control

2010 IEEE Radio and Wireless Symposium (RWS)

Author(s): Mercanti, M. ; Cidronali, A. ; Magrini, I. ; Manes, G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2010
Conference Location: New Orleans, LA, USA, USA
Conference Date: 10 January 2010
Page(s): 240 - 243
ISBN (CD): 978-1-4244-4726-8
ISBN (Paper): 978-1-4244-4725-1
DOI: 10.1109/RWS.2010.5434154
Regular:

This paper focuses a GaN HEMT power amplifier with 1-bit power control and provides experimental data. It relies on a new concept of power combining allowed by an adaptive gate bias control... View More

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