IEEE - Institute of Electrical and Electronics Engineers, Inc. - Frequency dependence of the unilateral gain in bipolar transistors

Author(s): S. Tiwari
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1989
Volume: 10
Page Count: 3
Page(s): 574 - 576
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.43144
Regular:

The frequency dependence of the current gain and the unilateral gain in advanced bipolar transistors is analyzed. A GaAlAs/GaAs heterostructure bipolar transistor (HBT) is used as an example to... View More

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