IEEE - Institute of Electrical and Electronics Engineers, Inc. - Implanted silicon JFET on completely depleted high-resistivity devices

Author(s): V. Radeka ; P. Rahek ; S. Rescia ; E. Gatti ; A. Longoni ; M. Sampietro ; G. Bertuccio ; P. Holl ; L. Struder ; J. Kemmer
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1989
Volume: 10
Page Count: 4
Page(s): 91 - 94
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.32439
Regular:

To satisfy the increasing interest in the integration of electronics onto optical and ionizing particle fully depleted detectors, a nonconventional JFET (junction field-effect transistor),... View More

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