IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comment, with reply, on 'Hot-electron hardened Si-gate MOSFET utilizing F implantation' by Y. Nishioka, et al

Author(s): P.J. Wright ; K.C. Saraswat
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1989
Volume: 10
Page Count: 3
Page(s): 397 - 399
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.31769
Regular:

For original paper see ibid., vol.10, p.141-3 (Apr. 1989). The commenters point out that the authors of the original paper were not, as they have claimed, the first to show the technique and... View More

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