IEEE - Institute of Electrical and Electronics Engineers, Inc. - Spatial charge distribution in as-deposited and UV-illuminated gate-quality nitrogen-rich silicon nitride

Author(s): J. Kanicki ; D. Jousse
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1989
Volume: 10
Page Count: 3
Page(s): 277 - 279
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.31745
Regular:

Gate-quality N-rich amorphous SiN/sub 1.6/:H films prepared by plasma-enhanced chemical vapor deposition (PECVD) at substrate temperatures of 250 and 400 degrees C are discussed. Films of... View More

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