IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling of currents in a vertical p-n-p transistor with extremely shallow emitter

Author(s): P.-F. Lu ; T.-C. Chen ; M.J. Saccomango
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1989
Volume: 10
Page Count: 3
Page(s): 232 - 235
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.31731
Regular:

Detailed simulations of the collector current in a vertical poly-emitter p-n-p transistor have been carried out to verify the minority-hole mobility model of S.E. Swirhun et al. (ibid., vol.7,... View More

Advertisement