IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors

Author(s): W.-S. Lee ; D. Ueda ; T. Ma ; Y.-C. Pao ; J.S. Harris, Jr.
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 1989
Volume: 10
Page Count: 3
Page(s): 200 - 202
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/55.31720
Regular:

An investigation of the effect of surface recombination and emitter-base-contact spacing on the DC current-gain of AlGaAs/GaAs heterojunction bipolar transistor (HBT) using thin AlGaAs... View More

Advertisement