IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transient SPICE simulation of Ni/HfO 2 /Si-n+ resistive memories

2016 Conference on Design of Circuits and Integrated Systems (DCIS)

Author(s): G. Gonzalez ; F. Jimenez-Molinos ; J. B. Roldan ; M. B. Gonzalez ; F. Campabadal
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 November 2016
Conference Location: Granada, Spain
Conference Date: 23 November 2016
Page(s): 1 - 6
ISBN (Electronic): 978-1-5090-4565-5
DOI: 10.1109/DCIS.2016.7845384
Regular:

A new SPICE model for the simulation of conductive bridge resistive memories has been developed. The model is based on filamentary transport and includes conduction through a constriction (by... View More

Advertisement