IEEE - Institute of Electrical and Electronics Engineers, Inc. - Density functional theory simulations and experimental measurements of a-HfO 2 /a-Si 3 N 4 /SiGe, a-HfO 2 /SiO 0.8 N 0.8 /SiGe and a-HfO 2 /a-SiO/SiGe interfaces

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): E. Chagarov ; K. Sardashti ; M. Edmonds ; M. Clemons ; A. Kummel
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838554
Regular:

A comprehensive set of density functional theory (DFT) molecular dynamics (MD) simulations is presented for interfaces between a-HfO2 high-K oxide and... View More

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