IEEE - Institute of Electrical and Electronics Engineers, Inc. - Coupling MOS quantum dot and phosphorous donor qubit systems

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): M. Rudolph ; P. Harvey-Collard ; R. Jock ; T. Jacobson ; J. Wendt ; T. Pluym ; J. Dominguez ; G. Ten-Eyck ; R. Manginell ; M. P. Lilly ; M. S. Carroll
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838537
Regular:

Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic... View More

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