IEEE - Institute of Electrical and Electronics Engineers, Inc. - High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Y.-J Lee ; T.-C Hong ; F.-K Hsueh ; P.-J Sung ; C.-Y Chen ; S.-S Chuang ; T.-C Cho ; S. Noda ; Y.-C Tsou ; K.-H Kao ; C.-T Wu ; T.-Y Yu ; Y.-L Jian ; C.-J Su ; Y.-M Huang ; W.-H Huang ; B.-Y Chen ; M.-C Chen ; K.-P Huang ; J.-Y Li ; M.-J Chen ; Y. Li ; S. Samukawa ; W.-F Wu ; G.-W Huang ; J.-M Shieh ; T.-Y Tseng ; T.-S Chao ; Y.-H Wang ; W.-K Yeh
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838535
Regular:

Ge peaking n- and p-FinFETs have been demonstrated by adopting neutral beam etching (NBE) and anisotropic neutral beam oxidation (NBO) processes. The irradiation-free NB processes not only... View More

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