IEEE - Institute of Electrical and Electronics Engineers, Inc. - Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge 0.91 Sn 0.09 /Ge quantum well p-MOSFETs

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Yu-Shiang Huang ; Chih-Hsiung Huang ; Fang-Liang Lu ; Chung-Yi Lin ; Hung-Yu Ye ; I-Hsieh Wong ; Sun-Rong Jan ; Huang-Siang Lan ; C. W. Liu ; Yi-Chiau Huang ; Hua Chung ; Chorng-Ping Chang ; Schubert S. Chu ; Satheesh Kuppurao
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838531
Regular:

It is the first time that CVD-grown GeSn channels with low thermal budget of 400°C significantly outperforms the Ge channel processed at high thermal budget of 550°C. Low thermal budget is... View More

Advertisement