IEEE - Institute of Electrical and Electronics Engineers, Inc. - Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Guangfan Jiao ; Maria Toledano-Luque ; Kab-Jin Nam ; Nakanishi Toshiro ; Seung-Hun Lee ; Jin-Soak Kim ; Thomas Kauerauf ; EunAe Chung ; Dong-il Bae ; Geumjong Bae ; Dong-Won Kim ; Kihyun Hwang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838518
Regular:

In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability... View More

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