IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 130 nm InP HBT integrated circuit technology for THz electronics

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): M. Urteaga ; J. Hacker ; Z. Griffith ; A. Young ; R. Pierson ; P. Rowell ; M. Seo ; M. J. W. Rodwell
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838503
Regular:

A 130 nm InP HBT IC technology has been developed capable of circuit demonstrations at > 600 GHz. Transistors demonstrate RF figures-of-merit ft > 500 GHz and fmax >... View More

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