IEEE - Institute of Electrical and Electronics Engineers, Inc. - Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Y. J. Song ; J. H. Lee ; H. C. Shin ; K. H. Lee ; K. Suh ; J. R. Kang ; S. S. Pyo ; H. T. Jung ; S. H. Hwang ; G. H. Koh ; S. C. Oh ; S. O. Park ; J. K. Kim ; J. C. Park ; J. Kim ; K. H. Hwang ; G. T. Jeong ; K. P. Lee ; E. S. Jung
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838491
Regular:

We fabricated 8Mb 1T-1MTJ STT-MRAM macro embedded in 28nm CMOS logic platform by developing novel integration/stack/patterning technologies. MTJ memory cell array was successfully embedded... View More

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