IEEE - Institute of Electrical and Electronics Engineers, Inc. - Technology for reliable spin-torque MRAM products

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): J. M. Slaughter ; K. Nagel ; R. Whig ; S. Deshpande ; S. Aggarwal ; M. DeHerrera ; J. Janesky ; M. Lin ; H.-J Chia ; M. Hossain ; S. Ikegawa ; F. B. Mancoff ; G. Shimon ; J. J. Sun ; M. Tran ; T. Andre ; S. M. Alam ; F. Poh ; J. H. Lee ; Y. T. Chow ; Y. Jiang ; H. X. Liu ; C. C. Wang ; S. M. Noh ; T. Tahmasebi ; S. K. Ye ; D. Shum
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838467
Regular:

In this paper we present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming... View More

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