IEEE - Institute of Electrical and Electronics Engineers, Inc. - Microsecond transient thermal behavior of HfOx-based resistive random access memory using a micro thermal stage (MTS)

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Zizhen Jiang ; Ziwen Wang ; Xin Zheng ; Scott Fong ; Shengjun Qin ; Hong-Yu Chen ; Chiyui Ahn ; Ji Cao ; Yoshio Nishi ; H.-S Philip Wong
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838465
Regular:

Microsecond transient thermal disturbance (TD) on the conduction and switching of HfOx-based resistive random access memory (RRAM) is investigated using a micro thermal stage (MTS).... View More

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