IEEE - Institute of Electrical and Electronics Engineers, Inc. - Si, SiC and GaN power devices: An unbiased view on key performance indicators

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): G. Deboy ; M. Treu ; O. Haeberlen ; D. Neumayr
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838458
Regular:

This paper discusses key parameters such as capacitances & switching losses for silicon, SiC and GaN power devices with respect to applications in switch mode power supplies. Whereas wide bandgap... View More

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