IEEE - Institute of Electrical and Electronics Engineers, Inc. - Performance benchmarking of p-type In 0.65 Ga 0.35 As/GaAs 0.4 Sb 0.6 and Ge/Ge 0.93 Sn 0.07 hetero-junction tunnel FETs

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): R. Pandey ; C. Schulte-Braucks ; R. N. Sajjad ; M. Barth ; R. K. Ghosh ; B. Grisafe ; P. Sharma ; N. von den Driesch ; A. Vohra ; B. Rayner ; R. Loo ; S. Mantl ; D. Buca ; C.-C Yeh ; C.-H Wu ; W. Tsai ; D. Antoniadis ; S. Datta
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838455
Regular:

We experimentally demonstrate and benchmark the performance of p-channel TFETs (PTFETs) comparing Group III-V (In0.65Ga0.35As/GaAs0.4SW0.6) against... View More

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