IEEE - Institute of Electrical and Electronics Engineers, Inc. - Two-dimensional heterojunction interlayer tunnel FET (Thin-TFET): From theory to applications

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Mingda Oscar Li ; Rusen Yan ; Debdeep Jena ; Huili Grace Xing
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838451
Regular:

We review the conception and development of two-dimensional heterojunction interlayer field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) and a high on-current are estimated... View More

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