IEEE - Institute of Electrical and Electronics Engineers, Inc. - Graphene-gate transistors for gas sensing and threshold control

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): N. Harada ; K. Hayashi ; M. Kataoka ; J. Yamaguchi ; M. Ohtomo ; M. Ohfuchi ; I. Soga ; D. Kondo ; T. Iwai ; S. Sato
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838444
Regular:

Graphene has been employed as gate electrodes of n-channel silicon transistors. When the graphene gate is exposed and gas molecules adsorb on the graphene surface, the work function of graphene... View More

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