IEEE - Institute of Electrical and Electronics Engineers, Inc. - Highly improved response and recovery characteristics of Si FET-type gas sensor using pre-bias

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Jongmin Shin ; Yoonki Hong ; Meile Wu ; Younjin Jang ; Jun Shik Kim ; Byung-Gook Park ; Cheol Seong Hwang ; Jong-Ho Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838443
Regular:

By adopting a new pulse pre-bias (Vpre) scheme, the response and recovery characteristics is significantly improved in Si field-effect transistor (FET)-type gas sensor having ZnO film... View More

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