IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Y. Kikuchi ; T. Hopf ; G. Mannaert ; Z. Tao ; A. Waite ; J. Cournoyer ; J. Borniquel ; R. Schreutelkamp ; R. Ritzenthaler ; M. S. Kim ; S. Kubicek ; S. A. Chew ; K. Devriendt ; T. Schram ; S. Demuynck ; N. Variam ; N. Horiguchi ; D. Mocuta
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838440
Regular:

For the first time, we have established a replacement metal gate complementary metal-oxide-semiconductor process flow for the high temperature ion implantation of bulk Si fin... View More

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