IEEE - Institute of Electrical and Electronics Engineers, Inc. - Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Gen Tsutsui ; Ruqiang Bao ; Kwan-yong Lim ; Robert R. Robison ; Reinaldo A. Vega ; Jie Yang ; Zuoguang Liu ; Miaomiao Wang ; Oleg Gluschenkov ; Chun Wing Yeung ; Koji Watanabe ; Steven Bentley ; Hiroaki Niimi ; Derrick Liu ; Huimei Zhou ; Shariq Siddiqui ; Hoon Kim ; Rohit Galatage ; Rajasekhar Venigalla ; Mark Raymond ; Praneet Adusumilli ; Shogo Mochizuki ; Thamarai S. Devarajan ; Bruce Miao ; Bei Liu ; Andrew Greene ; Jeffrey Shearer ; Pietro Montanini ; Jay W. Strane ; Christopher Prindle ; Eric R. Miller ; Jody Fronheiser ; Chengyu C. Niu ; Kisup Chung ; James J. Kelly ; Hemanth Jagannathan ; Sivananda Kanakasabapathy ; Gauri Karve ; Fee Li Lie ; Philip Oldiges ; Vijay Narayanan ; Terence B. Hook ; Andreas Knorr ; Dinesh Gupta ; Dechao Guo ; Rama Divakaruni ; Huiming Bu ; Mukesh Khare
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838439
Regular:

Low Ge content SiGe-based CMOS FinFET is one of the promising technologies [1-2] offering solutions for both high performance and low power applications. In this paper, we established a... View More

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