IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-heating in FinFET and GAA-NW using Si, Ge and III/V channels

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): E. Bury ; B. Kaczer ; D. Linten ; L. Witters ; H. Mertens ; N. Waldron ; X. Zhou ; N. Collaert ; N. Horiguchi ; A. Spessot ; G. Groeseneken
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838425
Regular:

The self-heating (SH) effect is studied experimentally and through simulations on an extensive set of industry-relevant solutions for FF and GAA-NW Si and high-mobility devices, with multiple... View More

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