IEEE - Institute of Electrical and Electronics Engineers, Inc. - Statistical model of the NBTI-induced threshold voltage, subthreshold swing, and transconductance degradations in advanced p-FinFETs

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): J. Franco ; B. Kaczer ; S. Mukhopadhyay ; P. Duhan ; P. Weckx ; Ph J. Roussel ; T. Chiarella ; L-A Ragnarsson ; L. Trojman ; N. Horiguchi ; A. Spessot ; D. Linten ; A. Mocuta
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838422
Regular:

We study the stochastic NBTI degradation of p-FinFETs, in terms of ΔVth, ΔSS, and Δgm. We extend our Defect-Centric model to describe also the SS distribution in a population of... View More

Advertisement