IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reliability characterization of 10nm FinFET technology with multi-V T gate stack for low power and high performance

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): Minjung Jin ; Changze Liu ; Jinju Kim ; Jungin Kim ; Hyewon Shim ; Kangjung Kim ; Gunrae Kim ; Soonyoung Lee ; Taiki Uemura ; Man Chang ; Taehyun An ; Junekyun Park ; Sangwoo Pae
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838420
Regular:

We report the reliability characterization of 10nm FinFET process technology. Unique reliability behavior by using multi-VT's through work function engineering is presented. Comparable... View More

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