IEEE - Institute of Electrical and Electronics Engineers, Inc. - Two-dimensional transistors based on MoS 2 lateral heterostructures

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): D. Marian ; E. Dib ; T. Cusati ; A. Fortunelli ; G. Iannaccone ; G. Fiori
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838413
Regular:

We propose two types of transistors based on lateral heterostructures of metallic and semiconducting phases of monolayer MoS2, whose top-down patterning has been recently demonstrated... View More

Advertisement