IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental study on hole and electron effective masses in inversion layers of Ge (100), (110) and (111) p- and n-MOSFETs

2016 IEEE International Electron Devices Meeting (IEDM)

Author(s): R. Zhang ; J. Li ; Z. Zheng ; X. Yu ; W. Dong ; Y. Zhao
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2016
Conference Location: San Francisco, CA, USA
Conference Date: 3 December 2016
ISBN (Electronic): 978-1-5090-3902-9
ISBN (USB): 978-1-5090-3901-2
ISSN (Electronic): 2156-017X
DOI: 10.1109/IEDM.2016.7838405
Regular:

The effective masses of hole and electron in the inversion layers have been quantitatively characterized for Ge p- and n-MOSFETs, for the first time, with Shubnikov-de Haas (SdH) oscillations... View More

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